1 3 2 10.2 0.2 ? 3 . 8 0 . 1 5 2.8 0.1 19.0 0.5 pin 3.5 0.3 0.9 0.1 2.5 0.1 13.8 0.5 2.6 0.2 0.5 0.1 8.9 0.2 1.4 0.2 4.5 0.2 pin 1 pin 3 case pin 2 features low cost low leakage low forward voltage drop high current capability mechanical data case:jedec to-220a b ,molded plastic terminals: s olderable per mil- std-202,method 208 polarity: color band denotes cathode w e i g h t : 0. 071 ounce, 2. 006 grams mounting pos ition: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. units maximum recurrent peak reverse voltage v rrm v ma x imum rms v o ltag e v r m s v maximum dc blocking voltage v dc v maximum average f orw ard rectif ied current @ t c = 110 peak forw ard surge current 8 . 3 m s s i ng l e h a l f - s i n e - w a v e s up e r i m p o s ed on r a t ed l o a d @ t j = 1 2 5 maximum instantaneous f orw ard voltage @ 1 0 a v f v maximum reverse current @t a = 2 5 at rated dc blocking voltage @t a = 1 0 0 typical junction capacitance (note1) c j pf typical thermal resistance (note2) r j c /w operating junction temperature range t j storage temperature range t stg 100 200 400 600 800 1000 70 140 280 420 560 700 voltage range: 100 --- 1000 v current: 20 a to-220a b diffused junction easily cleaned witn freon,alcohol,lsopropanol 20 a 10c - - - 20 a1 00c 10 0 40 0 i fsm note: 1. measured at 1.0mhz and applied reverse voltage of 4.0v dc. - 55 ---- + 150 - 55 - - - - + 150 i r 1 5 0 2.0 a 10 and s i m i l a r s ol v en t s i f ( av) 20 1.0 2. thermal resistance from junction to case . m a plastic silicon rectifier s the plastic material carries u/l recognition 94v-0 a 20 a1 0 c 20a20 c 20a40 c 20a60 c 20a80 c 20a100 c 100 200 400 600 800 1000 dimensions in millimeters diode semiconductor korea www.diode.kr
25 0 0 50 s i n g l e p h a s e h a l f w a v e 6 0 h z r e s i s t i v e o r inductive load 5.0 10 15 20 100 75 125 175 150 0 . 01 0 . 02 0 . 06 0 . 04 2 0 0 . 4 t j =25 pulse width=300us 0. 7 0.8 0.9 1 .0 1.1 1.2 0 . 1 0 . 2 1 . 0 2 4 10 .2 10 .1 .4 1 .0 2 100 10 00 4 10 20 40 100 f=1mhz t j =25 amperes amperes amperes capacitance, pf 20a10c---20a100c case temperature, ?? instantaneous forward voltage, volts i nstantaneous forward current fig.1 -- forward derating curve fig.2 -- typical forward characteristics peak forward surge current average forward rectified current number of cycles at 60hz s ur g e curr e nt fig.3 --maximum non-repetitive forward fig.4 -- typical junction capacitance reverse voltage, volts 1 2 4 108 20 40 60 80 100 0 t j =125 8.3ms single half sine-wave 100 200 300 400 www.diode.kr diode semiconductor korea
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